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| MGSF1N03LT1 Preferred Device Power MOSFET 30 V, 2.1 A, Single N-Channel, SOT-23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. * Low RDS(on) Provides Higher Efficiency and Extends Battery Life * Miniature SOT-23 Surface Mount Package Saves Board Space * Pb-Free Package is Available MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t 10 s Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current ESD Capability (Note 3) Steady State Steady State TA = 25C TA = 85C TA = 25C TA = 25C TA = 25C TA = 85C TA = 25C tp = 10 ms C = 100 pF, RS = 1500 W PD IDM ESD TJ, TSTG IS TL PD ID Symbol VDSS VGS ID Value 30 20 2.1 1.5 2.8 0.73 1.6 1.1 0.42 6.0 125 -55 to 150 2.1 260 W A V C A C N3 M 3 3 Drain 1 2 N3 SOT-23 CASE 318 STYLE 21 M 2 Source W A S Unit V V A G http://onsemi.com V(BR)DSS 30 V RDS(on) TYP 80 mW @ 10 V 125 mW @ 4.5 V ID MAX 2.1 A N-Channel D MARKING DIAGRAM/ PIN ASSIGNMENT Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) 1 Gate = Specific Device Code = Date Code THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t < 10 s (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol RqJA RqJA RqJA Max 170 100 300 Unit C/W ORDERING INFORMATION Device MGSF1N03LT1 MGSF1N03LT3 MGSF1N03LT3G Package SOT-23 SOT-23 SOT-23 (Pb-Free) Shipping 3000/Tape & Reel 10000/Tape & Reel 10000/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface-mounted on FR4 board using 1 in sq pad size. 2. Surface-mounted on FR4 board using the minimum recommended pad size. 3. ESD Rating Information: HBM Class 0. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2005 1 March, 2005 - Rev. 7 Publication Order Number: MGSF1N03LT1/D MGSF1N03LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mAdc) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 1.2 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (See Figure 6) SOURCE-DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 2) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. IS ISM VSD - - - - - 0.8 0.6 0.75 - V A (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 W) td(on) tr td(off) tf QT - - - - - 2.5 1.0 16 8.0 6000 - - - - - pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss - - - 140 100 40 - - - pF VGS(th) rDS(on) - - 0.08 0.125 0.10 0.145 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS - - IGSS - - - - 1.0 10 100 nAdc 30 - - Vdc mAdc Symbol Min Typ Max Unit TYPICAL ELECTRICAL CHARACTERISTICS 2.5 I D , DRAIN CURRENT (AMPS) 2 1.5 1 - 55C TJ = 150C 0.5 0 25C 1 1.5 2 2.5 3 3.5 0 0 2 4 6 8 VDS = 10 V I D , DRAIN CURRENT (AMPS) 2.5 2 1.5 1 0.5 VGS = 3.75 V 3.5 V 3.25 V 3.0 V 2.75 V 2.5 V 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. Transfer Characteristics Figure 2. On-Region Characteristics http://onsemi.com 2 MGSF1N03LT1 TYPICAL ELECTRICAL CHARACTERISTICS RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.24 150C VGS = 4.5 V 25C -55C 0.16 0.14 0.12 0.1 0.08 0.06 0.04 VGS = 10 V 150C 0.19 0.14 25C 0.09 -55C 0.04 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Drain Current 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -55 -25 0 25 50 75 100 125 150 VGS = 10 V ID = 2 A VGS = 4.5 V ID = 1 A Figure 4. On-Resistance versus Drain Current RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10 8 6 4 2 0 VDS = 24 V TJ = 25C ID = 2.0 A 0 1000 2000 3000 4000 5000 6000 TJ, JUNCTION TEMPERATURE (C) QT, TOTAL GATE CHARGE (pC) Figure 5. On-Resistance Variation with Temperature Figure 6. Gate Charge 1 I D , DIODE CURRENT (AMPS) 350 300 VGS = 0 V f = 1 MHz TJ = 25C 0.1 C, CAPACITANCE (pF) TJ = 150C 25C -55C 250 200 150 100 50 0.01 Ciss Coss Crss 0 4 8 12 16 20 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 VSD, DIODE FORWARD VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (Volts) Figure 7. Body Diode Forward Voltage Figure 8. Capacitance http://onsemi.com 3 MGSF1N03LT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 A L 3 1 2 BS V G C D H K J DIM A B C D G H J K L S V STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 4 MGSF1N03LT1/D |
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